• 文献标题:   Formation mechanism of overlapping grain boundaries in graphene chemical vapor deposition growth
  • 文献类型:   Article
  • 作  者:   DONG JC, WANG H, PENG HL, LIU ZF, ZHANG KL, DING F
  • 作者关键词:  
  • 出版物名称:   CHEMICAL SCIENCE
  • ISSN:   2041-6520 EI 2041-6539
  • 通讯作者地址:   City Univ Hong Kong
  • 被引频次:   9
  • DOI:   10.1039/c6sc04535a
  • 出版年:   2017

▎ 摘  要

The formation of grain boundaries (GBs) in graphene films is both fundamentally interesting and practically important for many applications. A GB in graphene is known as a linear defect and is formed during the coalescence of two single crystalline graphene domains. The covalent binding between domains is broadly known as the mechanism of GB formation during graphene chemical vapor deposition (CVD) growth. Here, we demonstrate another GB formation mechanism, where two graphene domains are connected by weak van der Waals interactions between overlapping graphene layers. The formation mechanism of the overlapping GBs (OLGBs) is systematically explored theoretically and the proposed conditions for forming OLGBs are validated by experimental observations. This discovery leads to a deep understanding of the mechanism of graphene CVD growth and reveals potential means for graphene quality control in CVD synthesis.