• 文献标题:   Berry phase induced valley level crossing in bilayer graphene quantum dots
  • 文献类型:   Article
  • 作  者:   HOU Z, ZHOU YF, XIE XC, SUN QF
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Peking Univ
  • 被引频次:   5
  • DOI:   10.1103/PhysRevB.99.125422
  • 出版年:   2019

▎ 摘  要

We study the confined bound states in circular bilayer graphene quantum dots. Using the semiclassical Einstein-Brillouin-Keller quantization rule, we predict that valley levels inside the quantum dot undergo three stages: splitting, crossing, and recombining when varying the applied magnetic field. This exotic phenomenon originates from the Berry phase, which increases from zero to 2 pi with the magnetic field and has opposite signs for the two inequivalent valleys. To further confirm this phenomenon, we perform a fully quantum mechanical calculation based on a low-energy continuum model and a real space tight-binding model, and show that the valley effect can be explicitly observed by scanning-tunneling spectroscopy measurements. Moreover, we propose an efficient valley filter device as an application of this valley effect, which can be used to manipulate the valley degree of freedom in valleytronics.