▎ 摘　　要

Graphene-like carbon films have been fabricated by annealing carbide-derived carbons on 6H-SiC (0001) at lower temperature in Ar ambience. Those films show a moderate interaction with substrates and an ordered stacking along c-axis and exhibit the same Raman spectra as that of epitaxial graphene on SiC. This carbon film growth process developed here will provide a new approach to obtain graphene epitaxially grown on SiC substrate at lower cost compared with the traditional access. (c) 2019 Author(s).