• 文献标题:   On the Quantum Hall Effect in mono(bi)-layer graphene
  • 文献类型:   Article
  • 作  者:   CHEREMISIN MV
  • 作者关键词:   quantum hall effect, graphene
  • 出版物名称:   PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES
  • ISSN:   1386-9477 EI 1873-1759
  • 通讯作者地址:   AF Ioffe Phys Tech Inst
  • 被引频次:   5
  • DOI:   10.1016/j.physe.2014.06.025
  • 出版年:   2014

▎ 摘  要

Based on a thermodynamic approach, we have calculated the specific resistivity of mono(bi)-layer graphene assumed dissipationless in quantizing magnetic field. The resistivity arises from combination of Peltier and Seebeck effects. The current I causes heating (cooling) at the first (second) sample contacts, due to the Peltier effect. The voltage measured across the sample is equal to the Seebeck thermoemf, and thus provides finite resistivity as I -> 0. The resistivity is a universal function of the magnetic field, e - h plasma density and temperature, expressed in fundamental units h/e(2). At fixed magnetic field the magneto-transport problem is resolved in the vicinity of the Dirac point taking into account the splitting of zeroth Landau level. For mono(bi)- layer graphene the B-dependent splitting of zeroth Landau level is recovered from experimental data. (C) 2014 Elsevier B.V. All rights reserved.