• 文献标题:   Half-Metallicity in Doped Armchair Graphene Nanoribbons-An Ab Initio Approach
  • 文献类型:   Article
  • 作  者:   CHAUHAN SS, SRIVASTAVA P, KURCHANIA R
  • 作者关键词:   substitutional, stability, electronic, transport, halfmetallicity
  • 出版物名称:   JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE
  • ISSN:   1546-1955 EI 1546-1963
  • 通讯作者地址:   Inst Informat Technol Management
  • 被引频次:   7
  • DOI:   10.1166/jctn.2011.1745
  • 出版年:   2011

▎ 摘  要

We present a comprehensive theoretical study based on density functional theory for stability, electronic and transport properties of armchair graphene nanoribbons. We have tested boron, beryllium, lithium, magnesium, fluorine, oxygen and nitrogen as substitutional dopant in the center of armchair graphene nanoribbons. It is observed that oxygen atom as substitutional dopant in armchair graphene nanoribbons is energetically more favorable and it also minimizes the band gap in all tested widths of armchair graphene nanoribbons (AGNRs). Moreover the oxygen doping at the center of ribbon predicts the half-metallicty in AGNRs. The transport properties are found to be influenced by edge doping of oxygen in AGNRs. These substituional oxygen atoms act as scattering centers for the electronic transport along the nanoribbons. Since transmission is sensitive to O doping, so our results point towards the relative suitability of O doped armchair edge for sensor applications.