• 文献标题:   Mechanisms of doping graphene
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   PINTO H, JONES R, GOSS JP, BRIDDON PR
  • 作者关键词:   doping, electrochemical, graphene
  • 出版物名称:   PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE
  • ISSN:   1862-6300 EI 1862-6319
  • 通讯作者地址:   Univ Exeter
  • 被引频次:   44
  • DOI:   10.1002/pssa.201000009
  • 出版年:   2010

▎ 摘  要

We distinguish three mechanisms of doping graphene. Density functional theory is used to show that electronegative molecules like tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) and electropositive metals like K dope graphene p- and n-type, respectively. These dopants are expected to lead to a decrease in carrier mobility arising from Coulomb scattering but without any hysteresis effects. Secondly, a novel doping mechanism is exhibited by Au which dopes bilayer graphene but not single layer. Thirdly, electrochemical doping is effected by redox reactions and can result in p-doping by humid atmospheres and n-doping by NH3 and toluene. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim