▎ 摘　　要

In this work, the electronic and thermoelectric properties of the graphene-like monolayer of InN were investigated by utilizing Wien2k and BoltzTrap codes considering PBE-GGA and mBJ potentials. The bandgap of InN monolayer was estimated at 0.72 and 0.98 eV by GGA and mBJ, respectively. The thermoelectric properties of the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, electronic specific heat, power factor and figure of merit were investigated in terms of temperature and potential energy. The figure of merit which describes the quality of material for thermoelectric applications was estimated at 0.92 for mu = -0.11 and 0.93 for mu = -0.13 with respect to mu(0) at T = 300 by GGA and mBJ respectively which are reasonable for practical applications. Also, it has been found that the figure of merit of InN monolayer remains close to the mentioned values at higher temperatures up to 800 K.