▎ 摘　　要

This paper presents graphene field-effect transistor (GFET) based pressure sensors for tactile sensing. The sensing device comprises GFET connected with a piezoelectric metal-insulator-metal (MIM) capacitor in an extended gate configuration. The application of pressure on MIM generates a piezo-potential which modulates the channel current of GFET. The fabricated pressure sensor was tested over a range of 23.54-94.18 kPa, and it exhibits a sensitivity of 4.55 x 10(-3) x kPa(-1). Further, the low voltage (similar to 100 mV) operation of the presented pressure sensors makes them ideal for wearable electronic applications. (C) 2018 Author(s).