• 文献标题:   Valley and spin polarization from graphene line defect scattering
  • 文献类型:   Article
  • 作  者:   GUNLYCKE D, WHITE CT
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
  • ISSN:   2166-2746
  • 通讯作者地址:   USN
  • 被引频次:   11
  • DOI:   10.1116/1.4706892
  • 出版年:   2012

▎ 摘  要

Quantum transport calculations describing electron scattering off an extended line defect in graphene are presented. The calculations include potentials from local magnetic moments recently predicted to exist on sites adjacent to the line defect. The transmission probability is derived and expressed as a function of valley, spin, and angle of incidence of an electron at the Fermi level being scattered. It is shown that the previously predicted valley polarization in a beam of transmitted electrons is not significantly influenced by the presence of the magnetic moments. These moments, however, do introduce some spin polarization, in addition to the valley polarization, albeit no more than about 20%. [http://dx.doi.org/10.1116/1.4706892]