▎ 摘　　要

We investigate the THz absorption properties of Fibonacci photonic crystals with graphene by using characteristics matrix method based on conductivity. We demonstrate that the structure can lead to perfect THz absorption because of strong photon localization in the defect layer of Fibonacci photonic crystals with graphene. By adjusting the incident angle, chemical potential, relaxation rate or the period number of Fibonacci photonic crystals, the maximum THz absorptivity can be tailored, and the absorptivity may be tuned continuously from 0 to 100%. The position of the THz absorption peaks can be tuned by changing the center wavelength or the thicknesses of structure layers. Moreover, the position of the THz absorption peaks can be tuned by changing the center wavelength or the thicknesses of structure layers. The proposed structure is easy to implement and has potential application in optoelectronic devices.