• 文献标题:   High-Current Reliability and Growth Conditions of Multilayer Graphene Wire Obtained by Annealing Sputtered Amorphous Carbon
  • 文献类型:   Article
  • 作  者:   SATO M, TAKAHASHI M, NAKANO H, MURO T, TAKAKUWA Y, SATO S, NIHEI M, YOKOYAMA N
  • 作者关键词:  
  • 出版物名称:   JAPANESE JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-4922 EI 1347-4065
  • 通讯作者地址:   Natl Inst Adv Ind Sci Technol
  • 被引频次:   6
  • DOI:   10.7567/JJAP.52.04CB07
  • 出版年:   2013

▎ 摘  要

We fabricated multilayer graphene directly on SiO2 by annealing of sputtered amorphous carbon under a catalyst layer without complicated transfer processes, and investigated the effects of the catalysts and the annealing ambient gases on obtaining large-grain, multilayer graphene. As a result, it was found that annealing conditions with a Co catalyst layer in a nitrogen gas atmosphere are important for increasing the ratio of oriented graphene sheets, corresponding to a lower resistivity of the film. Furthermore, it was confirmed that the multilayer graphene wire obtained by optimizing the growth conditions can sustain a high current density of 10(7) A/cm(2), that is, the lifetime of the multilayer graphene wire is over two orders of magnitude longer than that of a Cu wire with the same current density; this current density is over one order of magnitude higher than the current density that can be carried by a Cu wire for the same lifetime. (C) 2013 The Japan Society of Applied Physics