▎ 摘　　要

Graphene is a promising candidate for the replacement of the typical transparent electrode indium tin oxide in optoelectronic devices. Currently, the application of polycrystalline graphene films grown by chemical vapor deposition is limited for their low electrical conductivity due to the poor transfer technique. In this work, we developed a new method of preparing tri-layer graphene films with chemical modification and explored the influence of doping and patterning process on the performance of the graphene films as transparent electrodes. In order to demonstrate the application of the tri-layer graphene films in optoelectronics, we fabricated the organic light-emitting diodes (OLEDs) based on them and found that plasma etching is feasible with certain influence on the quality of the graphene films and the performance of the OLEDs.