▎ 摘　　要

In situ Raman spectroelectrochemistry has been applied to study chemical vapor-deposition-grown single-layer graphene membrane on a patterned SiO2/Si substrate. The SiO2/Si substrate is known to dope graphene, thus the substrate can significantly influence the properties of the graphene during electrochemical charging. We analyzed the change of the Raman intensity of the G mode as a function of electrode potential for a single-layer graphene membrane and we compared the results to those obtained for the same graphene sample on a substrate. Because of the elimination of the influence of a supporting substrate we have been able to achieve more efficient doping of graphene by applied electrode potentials.