• 文献标题:   Screening of Coulomb impurities in graphene
  • 文献类型:   Article
  • 作  者:   TEREKHOV IS, MILSTEIN AI, KOTOV VN, SUSHKOV OP
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Univ New S Wales
  • 被引频次:   69
  • DOI:   10.1103/PhysRevLett.100.076803
  • 出版年:   2008

▎ 摘  要

We calculate exactly the vacuum polarization charge density in the field of a subcritical Coulomb impurity, Z vertical bar e vertical bar/r, in graphene. Our analysis is based on the exact electron Green's function, obtained by using the operator method, and leads to results that are exact in the parameter Z alpha, where alpha is the "fine-structure constant" of graphene. Taking into account also electron-electron interactions in the Hartree approximation, we solve the problem self-consistently in the subcritical regime, where the impurity has an effective charge Z(eff), determined by the localized induced charge. We find that an impurity with bare charge Z=1 remains subcritical, Z(eff)alpha < 1/2, for any alpha, while impurities with Z=2, 3 and higher can become supercritical at certain values of alpha.