▎ 摘　　要

We demonstrate the growth of high-quality, continuous monolayer graphene on Cu foils using an open roll-to-roll (R2R) chemical vapor deposition (CVD) reactor with both static and moving foil growth conditions. N-2 instead of Ar was used as carrier gas to reduce process cost, and the concentrations of H-2 and CH4 reactants were kept below the lower explosive limit to ensure process safety for reactor ends open to ambient. The carrier mobility of graphene deposited at a Cu foil winding speed of 5 mm/min was 5270-6040 cm(2) V-1 s(-1) at room temperature (on 50 mu m x 50 mu m Hall devices). These results will enable the inline integration of graphene CVD for industrial R2R production. Published by AIP Publishing.