• 文献标题:   The metal-free magnetism and ferromagnetic narrow gap semiconductor properties in graphene-like carbon nitride
  • 文献类型:   Article
  • 作  者:   LI HS, HU HQ, BAI CL, BAO CJ, FENG ZB, GUO F
  • 作者关键词:   metalfree magnetism, electron spin polarization, narrow gap semiconductor propertie, ferromagnetic ordering, monte carlo simulation
  • 出版物名称:   PHYSICA BCONDENSED MATTER
  • ISSN:   0921-4526 EI 1873-2135
  • 通讯作者地址:   Liaocheng Univ
  • 被引频次:   2
  • DOI:   10.1016/j.physb.2018.11.003
  • 出版年:   2019

▎ 摘  要

In spintronics, if a two-dimensional (2D) organic metal-free material has stable magnetism and narrow gap semiconductor properties, it will have a very bright application prospect. A graphene-like carbon nitride (g-C13N13) that we design just meets these requirements. As a new structure, firstly the stability of the g-C13N13 has been verified. It has stable electron spin polarization and the magnetic moment of each primitive cell is 1 mu(B). It exhibits ferromagnetic narrow gap semiconductor properties through our analysis of energy band structure and charge density. Ferromagnetic ordering between two adjacent primitive cells is stable. The Monte Carlo simulation using the Ising model shows the Curie temperature material is 204 K. Our research is an inspiration for the applications of this kind of materials in spintronics devices.