▎ 摘　　要

In this work, Graphene-based field-effect transistors (GFETs) are demonstrated as a highly sensitive dosimeter for gamma radiation. Graphene-based field-effect transistors exhibit p-type doping with the Dirac point shifting in the positive direction upon exposure to gamma radiation. Concurrently, an asymmetric degradation in the electron and hole mobility was observed with the former degrading more rapidly. It is shown that change in the Dirac voltage and carrier mobility is strongly dependent on the dose of gamma radiation. A sensitivity of similar to 1 V/kGy is reported. Gamma radiation causes partial aerial oxidation of graphene-channel which leads to p-doping as confirmed by the emergence of a higher binding energy peak (286.8 eV) in X-ray photoelectron spectra (XPS). The decrease in contact potential difference estimated through Kelvin probe force microscopy (KPFM) confirms this finding. The radiated devices showed a stable response for similar to 70 days. Our work demonstrates that gamma irradiation can also be used to induce large and stable hole concentrations in graphene. Such highly sensitive GFET can serve as real-time dosimeter operating in ambient conditions.