▎ 摘　　要

Graphene, a two dimensional material with remarkable electronic properties, has attracted a huge interest among scientist during the last decade. We report the fabrication of Graphene-HfO2-based resistive RAM memories. We insert graphene layers between the oxide layer and the gold top electrode resulting in stabilization of a low resistance state stability without applied voltage, contrary to behaviour observed for identical graphene free memory devices. Graphene here is used as an oxygen reservoir and contribute to the switching mechanism. (C) 2016 Elsevier B.V. All rights reserved.