• 文献标题:   Graphene adhesion on MoS2 monolayer: An ab initio study
  • 文献类型:   Article
  • 作  者:   MA YD, DAI Y, GUO M, NIU CW, HUANG BB
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364
  • 通讯作者地址:   Shandong Univ
  • 被引频次:   254
  • DOI:   10.1039/c1nr10577a
  • 出版年:   2011

▎ 摘  要

The geometric and electronic structures of graphene adsorption on MoS2 monolayer have been studied by using density functional theory. It is found that graphene is bound to MoS2 with an interlayer spacing of 3.32 angstrom and with a binding energy of -23 meV per C atom irrespective of adsorption arrangement, indicating a weak interaction between graphene and MoS2. A detailed analysis of the electronic structure indicates that the nearly linear band dispersion relation of graphene can be preserved in MoS2/graphene hybrid accompanied by a small band-gap (2 meV) opening due to the variation of on-site energy induced by MoS2. These findings are useful complement to experimental studies of this new synthesize system and suggest a new route to facilitate the design of devices where both finite band-gap and high carrier mobility are needed.