• 文献标题:   Electronic and Transport Properties of Unbalanced Sublattice N-Doping in Graphene
  • 文献类型:   Article
  • 作  者:   LHERBIER A, BOTELLOMENDEZ AR, CHARLIER JC
  • 作者关键词:   graphene pet, electronic transport, nitrogen doping band gap, ab initio, tightbinding
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Catholic Univ Louvain
  • 被引频次:   66
  • DOI:   10.1021/nl304351z
  • 出版年:   2013

▎ 摘  要

Using both first-principles techniques and a real-space Kubo-Greenwood approach, electronic and transport properties of nitrogen-doped graphene with a single sublattice preference are investigated. Such a breaking of the sublattice symmetry leads to the appearance of a true band gap in graphene electronic spectrum even for a random distribution of the N dopants. More surprisingly, a natural spatial separation of both types of charge carriers at the band edge is predicted, leading to a highly asymmetric electronic transport. Both the presence of a band gap, allowing large on/off ratio, and an asymmetric transport pave a new route toward efficient graphene-based field-effect transistors.