• 文献标题:   Quantum-Well Bound States in Graphene Heterostructure Interfaces
  • 文献类型:   Article
  • 作  者:   DAI ZW, GAO ZL, PERSHOGUBA SS, TIWALE N, SUBRAMANIAN A, ZHANG QC, EADS C, TENNEY SA, OSGOOD RM, NAM CY, ZANG JD, JOHNSON ATC, SADOWSKI JT
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:  
  • 被引频次:   3
  • DOI:   10.1103/PhysRevLett.127.086805
  • 出版年:   2021

▎ 摘  要

We present experimental evidence of electronic and optical interlayer resonances in graphene van der Waals heterostructure interfaces. Using the spectroscopic mode of a low-energy electron microscope (LEEM), we characterized these interlayer resonant states up to 10 eV above the vacuum level. Compared with nontwisted, AB-stacked bilayer graphene (AB BLG), an approximate to 0.2 angstrom increase was found in the interlayer spacing of 30 degrees twisted bilayer graphene (30 degrees-tBLG). In addition, we used Raman spectroscopy to probe the inelastic light-matter interactions. A unique type of Fano resonance was found around the D and G modes of the graphene lattice vibrations. This anomalous, robust Fano resonance is a direct result of quantum confinement and the interplay between discrete phonon states and the excitonic continuum.