▎ 摘　　要

Epitaxial graphene field effect transistors were fabricated, characterized, and studied. Both the capacitance and transport measurements were performed on the same devices using an electrochemical gate. The quantum capacitance of the epitaxial graphene was extracted, which was similar to that of exfoliated graphene near the Dirac point, but it exhibits a large sublinear behavior at high carrier densities. The recently developed self-consistent theory for charged impurities in graphene is found to provide a reasonable description of the transport data, but a more complete theory is needed to explain both the transport and quantum capacitance data for the epitaxial graphene devices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3396982]