▎ 摘　　要

H and O incorporation in single-layer graphene (SLG) transferred onto SiO2/Si substrates following annealing in water vapor (H2O) was investigated. The use of isotopically enriched water in conjunction with nuclear reaction analysis enabled us to specifically investigate the effect of water annealing, among other modification agents of graphene like ambient exposure. Results revealed that incorporation of these species occurs by two distinct mechanisms, depending on the temperature range considered. From 100 to 300 degrees C, physisorption of H2O molecules in the SLG/SiO2/Si structure is the dominant process. For 400 degrees C and above, chemisorption is favored due to the creation of defects in the graphene lattice. Transport measurements demonstrated that the observed physico-chemical and structural modifications have a huge impact on the electrical characteristics of these structures.