▎ 摘　　要

In this work, graphene oxide quantum dots (GOQDs) are introduced as an electron-trapped layer in Pd/Zr0.5Hf0.5O2 (ZHO)/SiO2/Si memory device. This structure possessed longer than 10(4) s retention capability, a low operation voltage around +/- 10 V and 2.61 V storage windows. GOQDs contained carbon-carbon and carbon-oxygen single/double bonds based on the analysis of C-1s and O-1s X-ray photoelectron spectra. It is proposed that the GOQDs' wide bandgap with many oxygen-containing functional groups favors charge capture to a greater extent. This new type of charge-trapping memory can be a promising candidate for wide application to storing information with non-volatility in the big data era.