• 文献标题:   Investigation of high frequency performance limit of graphene field effect transistors
  • 文献类型:   Article
  • 作  者:   PINCE E, KOCABAS C
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Bilkent Univ
  • 被引频次:   13
  • DOI:   10.1063/1.3506506
  • 出版年:   2010

▎ 摘  要

Extremely high field effect mobility together with the high surface coverage makes graphene a promising material for high frequency electronics application. We investigate the intrinsic high frequency performance limit of graphene field effect transistors limited by the charge impurity scattering. The output and transfer characteristics of graphene field effect transistors together with the high frequency performance are characterized as a function of impurity concentration and dielectric constant of the gate insulator. Our results reveal that graphene transistors could provide power gain at radio frequency band. (C) 2010 American Institute of Physics. [doi:10.1063/1.3506506]