▎ 摘　　要

Growth of gallium nitride pyramids was carried out on few layer graphene substrates with different growth parameters such as growth time and precursor-to-substrate distance. The few layer graphene was synthesized by ultra-sonicating graphite and deposited on c-plane sapphire substrates by electrospinning technique. The indexed diffraction peaks obtained from X-ray diffractometer revealed good crystalline quality gallium nitride with a hexagonal crystal structure. The surface compositions of the samples have been studied by the X-ray photoelectron spectroscopy. The scanning electron microscopy results revealed the formation of gallium nitride pyramid structures all over the samples. The cathodoluminescence spectra showcased an improved band edge emission at 355 nm with weak deep level emissions corresponding to gallium nitride. The quality of gallium nitride obtained in the presence of few layer graphene had a positive effect on the luminescence properties, electrical and optical device performances.