▎ 摘　　要

Graphene oxide consists of sp(3) hybridization due to the presence of different oxygen containing functional groups on its edges and basal planes. However, its sp(3)/sp(2) hybridization can be tuned by various methods. Ion beam irradiation can also be one of the methods to optimize sp(2)/sp(3) hybridization for its desirable properties. In this work, graphene oxide films were irradiated with 100 keV Argon ions at different fluences varying from 10(13) to 10(16) ions/cm(2). Synchrotron X-ray diffraction (XRD) measurements showed an increase in crystallinity at low fluence of 10(13) ions/cm(2). Raman spectroscopy qualitatively determines the defects induced by ion beam in graphene oxide. Also, identification of different groups and their removal at different ion fluences was done using Fourier transform infra-red spectroscopy technique.