▎ 摘　　要

Raman scattering is used to study disorder in graphene subjected to low energy (90 eV) Ar' ion bombardment The evolution of the intensity ratio between the G band (1585 cm(-1)) and the disorder-induced D band (1345 cm(-1)) with ion dose is determined, providing a spectroscopy-based method to quantify the density of defects in graphene This evolution can be fitted by a phenomenological model, which is in conceptual agreement with a well-established amorphization. trajectory for graphitic materials Our results show that the broadly used Tuinstra-Koenig relation should be limited to the measure of crystallite sizes, and allows extraction of the Raman relaxation length for the disorder-induced Raman scattering process (C) 2010 Elsevier Ltd All rights reserved