• 文献标题:   Electronic properties of graphene with point defects
  • 文献类型:   Article
  • 作  者:   SKRYPNYK YV, LOKTEV VM
  • 作者关键词:  
  • 出版物名称:   LOW TEMPERATURE PHYSICS
  • ISSN:   1063-777X EI 1090-6517
  • 通讯作者地址:   Natl Acad Sci Ukraine
  • 被引频次:   1
  • DOI:   10.1063/1.5060964
  • 出版年:   2018

▎ 摘  要

This article attempts a point-by-point review of the electron spectrum of graphene containing defects (adsorbed atoms, substitutional atoms, vacancies) that can be adequately described within the Lifshitz model. In this regard, the known Hamiltonian for this model is calculated for the case of two-dimensional relativistic electrons, and the criteria for occurrence of an impurity resonance near a Dirac point are given. The theory of concentration band structure transformation of graphene is presented, from which it follows that a transport gap is opened upon reaching a strictly defined value of impurity concentration in the neighborhood of the energy of impurity resonance. At the same time, the question of the possibility (or impossibility) of localization in such a {spatially disordered system} of Dirac quasiparticles is analyzed. Based on this, it is possible to provide an explanation and present a description of a phenomenon recently observed in {impure graphene}, the metal-dielectric transition that appears as a direct consequence of the decrease of the Fermi energy of the system in the region of a transport gap. The concept of local spectrum rearrangement of graphene, which also occurs during the process of increased concentration of defects in it, is introduced and substantiated. Physical reasons are formulated, by which the position of the minimum of the low-temperature conductivity of graphene as a function of the Fermi energy of electrons corresponds to the impurity resonance energy rather than to the Dirac point, as has been validated in a number of theoretical and test studies. Here, it appears that the minimum value is not a universal magnitude, but depends on the concentration of defects. Analytical examination of impurity effects is accompanied by numerical modeling of the system under study, as a result of which complete correspondence has been established between these two approaches. In particular, the overall picture of spectrum rearrangement, localization of electron states, and also the effects having local nature are confirmed. Published by AIP Publishing.