▎ 摘　　要

ZnO thin films have been used in transparent conductive electrodes, window materials, etc. Herein, sol-gel derived In doped ZnO (In:ZnO) thin films were prepared by graphene-doping and vacuum-annealing. Various measurements were used to study the structure and properties of the films. As the graphene's concentration increased, the nanocrystal-size, Eg and R of the films were decreased; however, R increased after the graphene's concentration reached 0.1 wt.%. With increasing the annealing time at 250 degrees C in vacuum, the crystalsize became bigger and R was reduced by 10 times, due to less disorder and defects. R reached the smallest value 85 k omega, the film has greater Hall mobility of -11.8 cm2 /V center dot s and a higher carrier concentration of -7.38 & times; 1018 cm-3 when annealing in vacuum for 12 h. The properties of ZnO could be changed by adding different graphene's contents, thus they could be applied for photo-degradation, chemical sensing and transparent film electrodes. The In:ZnO thin films were of less defects and disorders and higher conductivity after annealing in vacuum for a long time.