▎ 摘　　要

Wafer-scale single-crystal graphene with strong antioxidation is fundamentally important for their applications in electronics and optoelectronics. Although significant progress has been achieved in the chemical vapor deposition (CVD) growth of graphene, the production of wafer-scale graphene with high crystalline and excellent oxidation resistance still remains a challenge. Here, we report the epitaxial growth of 6-inch single-crystal graphene on twinned Pt (111) films with in-plane rotation of 60 degrees(T-Pt) by ambient-pressure CVD. Our results show that the CVD-grown graphene on T-Pt exhibits fast growth rate and ultrahigh stability under the high-temperature air condition (>500 degrees C). The density functional theory (DFT) calculations reveal that the twinned Pt(111) surface does not change the preferential orientation of graphene nucleation, leading to highly aligned graphene domains on the T-Pt substrate. Moreover, the edge growth of graphene cannot be limited by the Pt twin boundaries (TBs), which is responsible for the fast growth of graphene single crystals. This work provides a reliable route to produce wafer-size single-crystal graphene monolayers with excellent oxidation resistance and clarifies the oriented growth mechanism of graphene domains on twinned Pt substrate. (C) 2021 Elsevier Ltd. All rights reserved.