• 文献标题:   Metal-free plasma-enhanced chemical vapor deposition of large area nanocrystalline graphene
  • 文献类型:   Article
  • 作  者:   SCHMIDT ME, XU CG, COOKE M, MIZUTA H, CHONG HMH
  • 作者关键词:   pecvd, nanocrystalline graphene, waferscale
  • 出版物名称:   MATERIALS RESEARCH EXPRESS
  • ISSN:   2053-1591
  • 通讯作者地址:   Japan Adv Inst Sci Technol
  • 被引频次:   22
  • DOI:   10.1088/2053-1591/1/2/025031
  • 出版年:   2014

▎ 摘  要

This paper reports on large area, metal-free deposition of nanocrystalline graphene (NCG) directly onto wet thermally oxidized 150 mm silicon substrates using parallel-plate plasma-enhanced chemical vapor deposition. Thickness non-uniformities as low as 13% are achieved over the whole substrate. The cluster size L-a of the as-obtained films is determined from Raman spectra and lies between 1.74 and 2.67 nm. The film uniformity was further confirmed by Raman mapping. The sheet resistance R-sq of 3.73 k Omega and charge carrier mobility mu of 2.49 cm(2) V-1 s(-1) are measured. We show that the NCG films can be readily patterned by reactive ion etching. NCG is also successfully deposited onto quartz and sapphire substrates and showed > 85% optical transparency in the visible light spectrum.