▎ 摘　　要

We describe the electronic conductivity, as a function of the Fermi energy, in the Bernal bilayer graphene (BLG) in presence of a random distribution of vacancies that simulate resonant adsorbates. We compare it to monolayer (MLG) with the same defect concentrations. These transport properties are related to the values of fundamental length scales such as the elastic mean free path L-e, the localization length. and the inelastic mean free path Li. Usually the later, which reflect the effect of inelastic scattering by phonons, strongly depends on temperature T. In BLG an additional characteristic distance l1 exists which is the typical traveling distance between two interlayer hopping events. We find that when the concentration of defects is smaller than 1%-2%, one has l(1)