• 文献标题:   Raman spectroscopy of four epitaxial graphene layers: Macro-island grown on 4H-SiC (000(1)over-bar) substrate and an associated strain distribution
  • 文献类型:   Article
  • 作  者:   TRABELSI AB, OUERGHI A, KUSMARTSEVA OE, KUSMARTSEV FV, OUESLATI M
  • 作者关键词:   graphene, four layermacroisland, raman spectroscopy, strain, gruneisen parameter
  • 出版物名称:   THIN SOLID FILMS
  • ISSN:   0040-6090
  • 通讯作者地址:   Univ Tunis
  • 被引频次:   9
  • DOI:   10.1016/j.tsf.2013.05.093
  • 出版年:   2013

▎ 摘  要

Using Raman spectroscopy, we have characterised the optical and mechanical properties of a large macro-island area (150 mu m(2)) of four layer epitaxial graphene grown on a 4H-SiC (000 (1) over bar) substrate. Local Raman mapping showed an inhomogeneously stressed macro-island. There, the 2D and G Raman modes revealed a large frequency red-shift in this island with a decreasing temperature. An unexpected change appeared in the Raman spectra due to the inhomogeneous strain effect which was described in detail. Uniaxial and biaxial strains have been identified. (C) 2013 Elsevier B.V. All rights reserved.