▎ 摘　　要

To enhance the electrical performance of conventional graphene devices, the fabrication of one-dimensional edge contacts for electrodes has been a significant issue. Edge contact graphene devices have been created by sandwiching graphene between boron nitrides, or by forming graphene antidot arrays under a metal electrode. Here, we report a simple method for the fabrication of edge contact between chemical-vapor-deposition-grown graphene and metal electrodes. The electrical performance of graphene-based field effect transistors with edge contacts was compared to that of transistors with conventional surface contacts. The dangling bonds at the graphene edge give strong interactions that form covalent bonds with metal atoms. This leads to improved electrical properties for edge contact-based devices, in comparison with surface contact-based devices. Our photolithography process that uses a bilayer resist and plasma etching provides an easy way to fabricate high-quality graphene devices.