▎ 摘　　要

In this work, a new solar cell structure is presented by drainage AlGaAs inside GaAs. The results of the presented structure are investigated at temperatures of 273 K, 300 K, and 323 K, and the power conversion efficiencies (PCE) of 19.95%, 19.45%, and 19.01% are obtained, respectively. In the proposed structure, due to the increase in the AlGaAs with GaAs interface, the electric field is increased, and the open-circuit voltage (V-oc) is significantly improved. The parameters of the proposed structure are optimized in the width and depth of the drainage region and absorber layer (GaAs) doping density to enhance efficiency. The optimization of various parameters of the proposed structure indicates that PCEs are 19.31%, 19.45%, and 19.41% in 100, 300, and 500 nm drainage depths, respectively. Also, the efficiency study shows that the proposed structure in the different doping densities has a higher efficiency than the main structure. Also, the parameters and models used in the simulations are first calibrated with the results of experimental data. Then the Graphene/AlGaAs/GaAs solar cell structure as the main structure in this study is simulated at 273 K, 300 K, and 323 K temperatures. The results of these simulations represent PCEs of 14.5%, 14.42%, and 14.31% for the expressed temperatures, respectively, such that open-circuit voltage (V-oc), short-circuit current density (J(sc)), and fill factor (FF) are equal to about 0.74 V, 23 mA=cm(2), and 83%, respectively.