▎ 摘　　要

High-quality and wafer-scale graphene on insulating gate dielectrics is a prerequisite for graphene electronic applications. For such applications, graphene is typically synthesized and then transferred to a desirable substrate for subsequent device processing. Direct production of graphene on substrates without transfer is highly desirable for simplified device processing. However, graphene synthesis directly on substrates suitable for device applications, though highly demanded, remains unattainable and challenging. Here, we report a simple, transfer-free method capable of synthesizing graphene directly on dielectric substrates at temperatures as low as 600 degrees C using polycyclic aromatic hydrocarbons as the carbon source. Significantly, N-doping and patterning of graphene can be readily and concurrently achieved by this growth method. Remarkably, the graphene films directly grown on glass attained a small sheet resistance of 550 O/sq and a high transmittance of 91.2%. Organic light-emitting diodes (OLEDs) fabricated on N-doped graphene on glass achieved a current density of 4.0 mA/cm(2) at 8 V compared to 2.6 mA/cm(2) for OLEDs similarly fabricated on indium tin oxide (ITO)-coated glass, demonstrating that the graphene thus prepared may have potential to serve as a transparent electrode to replace ITO.