• 文献标题:   Graphene quantum dot-embedded perovskite photodetectors with fast response and enhanced sensitivity through bulk defect passivation
  • 文献类型:   Article
  • 作  者:   LEE DS, YUN JS, HEO JH, KIM BW, IM SH
  • 作者关键词:   graphene quantum dot, perovskite, photodetector, fast response, sensitivity, bulk defect passivation
  • 出版物名称:   JOURNAL OF INDUSTRIAL ENGINEERING CHEMISTRY
  • ISSN:   1226-086X EI 1876-794X
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1016/j.jiec.2021.05.001 EA JUN 2021
  • 出版年:   2021

▎ 摘  要

Graphene quantum dots (GQDs) synthesized by single phase solution chemistry are embedded in metal halide perovskite (MHP) films because they can act as passivating defects that are present throughout the MHP film, not only at the interface but also throughout the bulk of the film. The perovskite photodetectors composed of indium-doped tin oxide/SnO2/MHP with embedded GQDs/poly triarylamine/Au have the reduced dark current, increased detectivity, and fasted response speed due to lower trap density throughout the bulk MHP layer. (C) 2021 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.