• 文献标题:   Low-Power Complementary Logic Circuit Using Polymer-Electrolyte-Gated Graphene Switching Devices
  • 文献类型:   Article
  • 作  者:   SON M, KIM H, JANG J, KIM SY, KI HC, LEE BH, KIM IS, HAM MH
  • 作者关键词:   graphene fieldeffect transistor, chemical doping, polymer electrolyte, logic inverter, lowpower consumption
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244 EI 1944-8252
  • 通讯作者地址:   Korea Photon Technol Inst KOPTI
  • 被引频次:   1
  • DOI:   10.1021/acsami.9b16417
  • 出版年:   2019

▎ 摘  要

The modulation of the electrical properties of graphene and its device configurations for low-power consumption are important in developing graphene-based logic electronics. Here, we demonstrate the change in the charge transport in graphene from ambipolar to unipolar using surface charge transfer doping of the polymer electrolyte. Unipolar graphene field-effect transistors (GFETs) were obtained by the surface treatment of poly(acrylic acid) (PAA) for p-type and poly(ethyleneimine) (PEI) for n-type as polymer-electrolyte gates. In addition, lithium perchlorate (LiClO4) in a polymer matrix can be used for the low-gate voltage operation of GFETs (less than +/- 3 V) because of its high gating efficiency. Using polymer-electrolyte-gated GFETs, complementary graphene inverters were fabricated with a voltage swing of 57% and maximum voltage gain (V-gain) of 1.1 at a low supply voltage (V-DD = 1 V). This is expected to facilitate the development of graphene-based logic devices with low-cost, low-power, and flexible electronics.