• 文献标题:   Vacancy defects in the vertical heterostructures of graphene and MoS2
  • 文献类型:   Article
  • 作  者:   LI W, YOU YZ, CHOI JH
  • 作者关键词:   van der waals heterostructure, graphene, mos2, vacancy defect, density functional theory
  • 出版物名称:   SURFACE SCIENCE
  • ISSN:   0039-6028 EI 1879-2758
  • 通讯作者地址:  
  • 被引频次:   6
  • DOI:   10.1016/j.susc.2021.121809 EA FEB 2021
  • 出版年:   2021

▎ 摘  要

Van der Waals (vdW) heterostructures of two-dimensional materials have attracted significant attention owing to their potential applications in electronics, optics, and catalysis. In this study, we investigated the energetics and electronic properties of vacancy defects in the vdW heterostructures of graphene and MoS2, based on first-principles density functional theory calculations. The effects of the interlayer interactions modify the atomic and electronic configurations of the defects substantially. As a result, the formation enthalpy of the C vacancies decreases by 0.06-0.54 eV, while that of the S vacancies increases by 0.36-0.53 eV. Interestingly, in the hetemstructure, the graphene layer with the C vacancy has a non-planar antiferromagnetic ground structure, which can be attributed to the effects of charge redistribution. In contrast, a competing ferromagnetic state has a planar graphene structure.