• 文献标题:   Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface
  • 文献类型:   Article
  • 作  者:   XU P, ACKERMAN ML, BARBER SD, SCHOELZ JK, THIBADO PM, WHEELER VD, NYAKITI LO, MYERSWARD RL, EDDY CR, GASKILL DK
  • 作者关键词:   twisted graphene, scanning tunneling microscopy, silicon carbide, moire pattern
  • 出版物名称:   SURFACE SCIENCE
  • ISSN:   0039-6028 EI 1879-2758
  • 通讯作者地址:   Univ Arkansas
  • 被引频次:   5
  • DOI:   10.1016/j.susc.2013.06.012
  • 出版年:   2013

▎ 摘  要

Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n(+) 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a rotation angle of 5.4 degrees between the top two layers, by comparing moire patterns from stick and ball models of bilayer graphene to experimentally obtained images. Furthermore, the experimental moire pattern shows dynamic behavior, continuously shuffling between two stable surface arrangements one bond length apart. The moire pattern shifts by more than 1 nm, making it easy to observe with STM. Explanation of this dynamic behavior is attributed to electrostatic interactions between the STM tip and the graphene sample. (C) 2013 Elsevier B.V. All rights reserved.