文献标题: Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices
文献类型: Editorial Material
作 者: NGUYEN HPT
作者关键词:
出版物名称: LIGHTSCIENCE APPLICATIONS
ISSN: 2047-7538
通讯作者地址:
被引频次: 0
DOI: 10.1038/s41377-022-00861-1
出版年: 2022
▎ 摘 要
Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.
