• 文献标题:   Defect formation in single layer graphene under extreme ultraviolet irradiation
  • 文献类型:   Article
  • 作  者:   GAO A, ZOETHOUT E, STURM JM, LEE CJ, BIJKERK F
  • 作者关键词:   euv, irradiation, graphene, defect
  • 出版物名称:   APPLIED SURFACE SCIENCE
  • ISSN:   0169-4332 EI 1873-5584
  • 通讯作者地址:   FOM Dutch Inst Fundamental Energy Res
  • 被引频次:   5
  • DOI:   10.1016/j.apsusc.2014.08.177
  • 出版年:   2014

▎ 摘  要

We study extreme ultraviolet (EUV) radiation induced defects in single-layer graphene. Two mechanisms for inducing defects in graphene were separately investigated: photon induced chemical reactions between graphene and background residual gases, and breaking sp(2) bonds, due to photon and/or photoelectrons induced bond cleaving. Raman spectroscopy shows that D peak intensities grow after EUV irradiation with increasing water partial pressure in the exposure chamber. Temperature-programmed desorption (TPD) experiments prove that EUV radiation results in water dissociation on the graphene surface. The oxidation of graphene, caused by water dissociation, is triggered by photon and/or photoelectron induced dissociation of water. Our studies show that the EUV photons break the sp(2) bonds, forming sp(3) bonds, leading to defects in graphene. (C) 2014 Elsevier B.V. All rights reserved.