• 文献标题:   Ripples, Strain, and Misfit Dislocations: Structure of Graphene-Boron Nitride Super lattice Interfaces
  • 文献类型:   Article
  • 作  者:   NANDWANA D, ERTEKIN E
  • 作者关键词:   graphene, hexagonal boron nitride, lattice relaxation, misfit dislocation, interface structure, heteroepitaxy
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Univ Illinois
  • 被引频次:   22
  • DOI:   10.1021/nl505005t
  • 出版年:   2015

▎ 摘  要

In recently synthesized two-dimensional superlattices of graphene and boron nitride, the atomic structure of the interface is complicated by a 2% lattice mismatch between the two materials. Using atomistic and continuum analysis, we show that the mismatch results in a competition between two strain-relieving mechanisms: misfit dislocations and rippling. For flat superlattices, beyond a critical pitch the interface is decorated by strain-relieving misfit dislocations. For superlattices that can deform out-of-plane, optimal ripple wavelengths emerge.