• 文献标题:   Resistive switching in manganite/graphene hybrid planar nanostructures
  • 文献类型:   Article
  • 作  者:   ROCCI M, TORNOS J, RIVERACALZADA A, SEFRIOUI Z, CLEMENT M, IBORRA E, LEON C, SANTAMARIA J
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   UCM UPM
  • 被引频次:   3
  • DOI:   10.1063/1.4868426
  • 出版年:   2014

▎ 摘  要

We report on the fabrication and magnetotransport characterization of hybrid graphene-based nanodevices with epitaxial nanopatterned La0.7Sr0.3MnO3 manganite electrodes grown on SrTiO3 (100). The few-layer graphene was deposited onto the predefined manganite nanowires by using a mechanical transfer technique. These nanodevices exhibit resistive switching and hysteretic transport as measured by current-voltage curves. The resistance can be reversibly switched between high and low states, yielding a consistent non-volatile memory response. The effect is discussed in terms of changes in the concentration of oxygen vacancies at the space charge region of the Schottky barriers building at the contacts. (C) 2014 AIP Publishing LLC.