• 文献标题:   Anisotropic conductivity of doped graphene due to short-range nonsymmetric scattering
  • 文献类型:   Article
  • 作  者:   VASKO FT
  • 作者关键词:   doping profile, electrical conductivity, graphene
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   NAS Ukraine
  • 被引频次:   2
  • DOI:   10.1063/1.3431667
  • 出版年:   2010

▎ 摘  要

The conductivity of doped graphene is considered taking into account scattering by short-range nonsymmetrical defects, when the longitudinal and transverse components of conductivity tensor appear to be different. The calculations of the anisotropic conductivity tensor are based on the quasiclassical kinetic equation for the case of monopolar transport at low temperatures. The effective longitudinal conductivity and the transverse voltage, which are controlled by orientation of sample and by gate voltage (i.e., doping level), are presented. (C) 2010 American Institute of Physics. [doi:10.1063/1.3431667]