▎ 摘　　要

We examine mobility and saturation velocity in graphene on SiO2 above room temperature (300-500 K) and at high fields (similar to 1 V/mu m). Data are analyzed with practical models including gated carriers, thermal generation, "puddle" charge, and Joule heating. Both mobility and saturation velocity decrease with rising temperature above 300 K, and with rising carrier density above 2x10(12) cm(-2). Saturation velocity is >3x10(7) cm/s at low carrier density, and remains greater than in Si up to 1.2x10(13) cm(-2). Transport appears primarily limited by the SiO2 substrate but results suggest intrinsic graphene saturation velocity could be more than twice that observed here. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3483130]