▎ 摘　　要

The band-gap opening in graphene is a key factor in developing graphene-based field-effect transistors. Although graphene is a gapless semimetal, a band gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamondlike carbon nanotemplate onto a SiO2/Si wafer via focused ion-beam-assisted chemical vapor deposition is first utilized for growth of the GNR These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.