▎ 摘　　要

Electron scattering by short-range defects in planar monolayer graphene is considered. This interaction is approximated by the delta-like potential concentrated on a circumference with a small radius, which provides the suppression of nonphysical shortwave modes. The contribution of this scattering to the graphene resistance is analyzed. The obtained results agree well with the experiment on suspended annealed monolayer graphene. This makes it possible to determine parameters of the approximating potential based on experimental data about the graphene resistivity, which is important for applications.