• 文献标题:   Octagonal Defects as the Source of Gap States in Graphene Semiconducting Structures
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   PELC M, JASKOLSKI W, AYUELA A, CHICO L
  • 作者关键词:  
  • 出版物名称:   ACTA PHYSICA POLONICA A
  • ISSN:   0587-4246 EI 1898-794X
  • 通讯作者地址:   Nicolaus Copernicus Univ
  • 被引频次:   3
  • DOI:  
  • 出版年:   2013

▎ 摘  要

We study graphene nanoribbons and carbon nanotubes with divacancies, i.e., local defects composed of one octagon and a pair of pentagons. We show that the presence of divacancies leads to the appearance of gap states, which may act as acceptor or donor states. We explain the origin of those defect-localized states and prove that they are directly related to the zero-energy states of carbon ring forming the octagonal topological defect.